Uncorrectable Bit Error Rate (UBER): < 1 per 10^17 bits read
Power consumption (read): 2.1W
Power consumption (write): 2.7W
NVMe: No
SSD capacity: 240GB
SSD form factor: 2.5"
Specifications
Features
Mean time between failures (MTBF)
2000000 h
Security algorithms
256-bit AES
Controller type
Samsung Metis
Product colour
Black
Data transfer rate
6 Gbit/s
S.M.A.R.T. support
✓
Power consumption (idle)
1.30 W
Uncorrectable Bit Error Rate (UBER)
< 1 per 10^17 bits read
Component for
Server/workstation
NAND flash type
TLC (Triple Level Cell)
Packaging data
Package type
Box
Package weight
703 g
Package height
188 mm
Package depth
189 mm
Package width
241 mm
Weight & dimensions
Weight
70 g
Height
69.80 mm
Depth
6.80 mm
Width
100 mm
Power
Operating voltage
5 V
Power consumption (max)
1.50 W
Power consumption (read)
2.10 W
Power consumption (write)
2.70 W
Other features
NAND controller
V-NAND
Storage
RAID support
✓
NVMe
✗
SSD capacity
240 GB
SSD form factor
2.5"
Design
Internal
✓
Packaging content
Quick start guide
✓
Manual
✓
Ports & interfaces
Interface
Serial ATA, Serial ATA III
Operational conditions
Operating temperature (T-T)
0 - 70 °C
Operating relative humidity (H-H)
5 - 95 %
Non-operating vibration
20 G
Non-operating shock
1500 G
Operating shock
1500 G
Storage relative humidity (H-H)
5 - 95 %
Memory
ECC
✓
Security
TRIM support
✓
Hardware encryption
✓
End-to-End Data Protection
✓
Logistics data
Harmonized System (HS) code
84717070
Solid state drive
Memory type
V-NAND TLC
Read speed
550 MB/s
Write speed
380 MB/s
Storage drive buffer size
512 MB
Random write (4KB)
15000 IOPS
Random read (4KB)
98000 IOPS
Product Details
V-NAND Technology
Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 32 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.
Sustained Performance
Built to handle the 24/7 operation and heavier workloads of data center usage, the PM863 delivers an exceptionally high level of sustained performance and consistent low latency over the life of the SSD to meet the demands for increasing data handling.
IOPS Consistency
When combined in RAID configurations with multiple drives, small variations are multiplied and lead to significant effects on performance. The PM863 delivers an exceptional level of performance above 99% in random read, as well as superior performance in random write.
Outstanding Reliability
The PM863 is optimized for server and data center environments by offering reinforced endurance, enterprise-grade power-loss protection thanks to tantalum capacitors, low power consumption and a 3-year limited warranty.
Latency and QoS
The PM863 offers extremely low latency and a high level of Quality of Service (QoS), which are both essential for data center and cloud server applications.
Advanced ECC Engine and End-to-End Data Protection
Detect signal discrepancies and proactively remedy them in real time with the Error Correcting Code (ECC) engine.
Power-Loss Protection
Protect data integrity from unexpected power loss with Samsung's advanced power-loss protection architecture. Using the electricity from a tantalum capacitor to provide enough time to transfer the cached data in the DRAM to the flash memory, you can be assured no loss of data.
S.M.A.R.T.
Monitor the computer drives proactively to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T).
Dynamic Thermal Guard Protection
Safeguard the SSD from overheating by automatically controlling the speed of the CPU relative to its core temperature, by throttling back the performance to prevent thermal shutdown.